Silicon Carbide (SiC) Schottky Diode - EliteSiC, 10A, 650V, D2, TO-247-2L

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Overview

EliteSiC Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost

  • Industrial
  • UPS / ESS
  • Solar
  • EV Charger
  • Max Junction Temperature 175C
  • Avalanche Rated 51 mJ
  • High Surge Current Capacity
  • Positive Temperature Coefficient
  • No Reverse Recovery / No Forward Recovery
  • Low Vf @ TJ:175 °C

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Reference Price

FFSH1065B-F155

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CAD Model

Pb

A

H

P

TO−247−2LD

NA

0

TUBE

450

F

D2

Single

650

10

1.7

42

40

$1.48

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