FFSB1065B: Silicon Carbide Schottky Diode 650V 10A D2PAK

Datasheet: Silicon Carbide Schottky Diode, 650 V, 10 A
Rev. 0 (350kB)
Product Overview
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Product Change Notification
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
Features   Benefits
     
  • High UIS, Surge Current, and Avalanche
 
  • 49mJ @ 25C
  • High Junction Temperature
 
  • Tj = 175C
  • Low Vf
 
  • 1.41V
  • No Qrr
 
  • < 100nC
Applications   End Products
  • PFC
 
  • Servers
  • Power Supplies
Technical Documentation & Design Resources
Simulation Models (3) Package Drawings (1)
Data Sheets (1) Videos (1)
Availability & Samples
Specifications
Interactive Block Diagram
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FFSB1065B Active
Pb-free
Halide free
FFSB1065B, Silicon Carbide Schottky Diode 650V 10A D2PAK D2PAK2 (TO-263-2L) 418BK 1 260 Tape and Reel 800 $1.474
Market Leadtime (weeks) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Family
Configuration
VRRM (V)
IF(ave) (A)
VF (Max)
IFSM (A)
IR (Max) (µA)
Package Type
FFSB1065B  
 $1.474 
Pb
H
 Active   
D2
Single
650
10
1.7
45
40
D2PAK2 (TO-263-2L)
Case Outlines
418BK   
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