MOSFETs | FDMC7692

N-Channel Power Trench® MOSFET 30V, 13.3A, 8.5mΩ

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Overview

This N-Channel MOSFET is produced using an advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

  • This product is general usage and suitable for many different applications.
  • Max rDS(on) = 8.5 mΩ at VGS = 10 V, ID = 13.3 A
  • Max rDS(on) = 11.5 mΩ at VGS = 4.5 V, ID = 10.6 A
  • High performance technology for extremely low rDS(on)
  • Termination is Lead-free and RoHS Compliant

Material Composition

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FDMC7692

Active

Pb

A

H

P

WDFN-8

511DQ

1

260

REEL

3000

Y

N-Channel

Single

30

20

3

13.3

29

-

11.5

8.5

8

10

1260

$0.3157

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