onsemi Develops IGBT FS7 Switch Platform with Leading Performance for Industrial Markets

三月 21, 2023

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全新1200 V器件提供领先市场的导通和开关性能

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2023 年 3 月 21日 —领先于智能电源和智能感知技术的安森美（onsemi，美国纳斯达克上市代号：ON），推出一系列全新超高能效1200V绝缘栅双极型晶体管（IGBT），具备业界领先的性能水平，最大程度降低导通损耗和开关损耗。这些新器件旨在提高快速开关应用能效，将主要用于能源基础设施应用，如太阳能逆变器、不间断电源（UPS）、储能和电动汽车充电电源转换。

新的1200V沟槽型场截止（FS7）IGBT在高开关频率能源基础设施应用中用于升压电路提高母线电压，及逆变回路以提供交流输出。FS7器件的低开关损耗可实现更高的开关频率，从而减少磁性元件的尺寸，提高功率密度并降低系统成本。对于高功率能源基础设施应用，FS7器件的正温度系数使其能够轻松实现并联运行。

安森美高级副总裁兼电源方案部先进电源分部总经理Asif Jakwani说：“由于能效在所有高开关频率的能源基础设施应用中极为关键，所以我们专注于降低关断损耗，这新系列的IGBT提供极佳的开关性能，其业界领先的性能使设计人员能够在要求非常高的高功率能源基础设施应用中满足最具挑战的能效要求。”

FS7器件包括高速（S系列）和中速（R系列）版本。所有器件都含一个优化的二极管，实现低VF，减少开关损耗，可在高达175℃的结温（TJ）下工作。S系列器件如FGY75T120SWD的开关性能领先市场现有1200V IGBT。经7倍额定电流的测试，这种高可靠性的IGBT产品展现出出类拔萃的抗闩锁能力。R系列针对以导通损耗为主的中速开关应用如电机控制和固态继电器进行了优化。 FGY100T120RWD在100 A时VCESAT低至1.45V，比前一代器件降低了0.4V。

FS7器件可采用TO247-3L, TO247-4L, Power TO247-3L等封装，也可提供裸片，为设计人员提供灵活性和设计备选配置。

About onsemi

onsemi (Nasdaq: ON) is driving disruptive innovations to help build a better future. With a focus on automotive and industrial end-markets, the company is accelerating change in megatrends such as vehicle electrification and safety, sustainable energy grids, industrial automation, and 5G and cloud infrastructure. onsemi offers a highly differentiated and innovative product portfolio, delivering intelligent power and sensing technologies that solve the world’s most complex challenges and leads the way to creating a safer, cleaner, and smarter world. onsemi is recognized as a Fortune 500® company and included in the S&P 500® index. Learn more about onsemi at www.onsemi.com.

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onsemi and the onsemi logo are trademarks of Semiconductor Components Industries, LLC. All other brand and product names appearing in this document are registered trademarks or trademarks of their respective holders. Although the Company references its website in this news release, information on the website is not to be incorporated herein.

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