In yesterday’s blog "latest ON Semiconductor innovations in Wide Band Gap technology at PCIM" we talked about all the exciting developments around WBG that ON Semiconductor will be showcasing at PCIM Europe this week. In addition to WBG, the company will showcase its latest power modules that combine high efficiency with robust physical and electrical design for demanding industrial applications in Hall 9, Booth 342.
A power tool demonstration at the booth will illustrate to visitors how ON Semiconductor’s power modules can help achieve compact, high efficiency designs that support long battery life. Power modules are important building blocks in power conversion and motor control applications having power ratings of 100 W to 100 kW. Solar and UPS systems use power modules to boost the voltage from the solar panels and batteries to a suitable DC voltage. This voltage drives an output inverter stage, which generates the required AC voltage. Three-level inverter topologies - such as I-type neutral-point clamped inverters (NPC), T-type neutral-point clamped inverters (TNPC), and split T-type neutral-point clamped inverters - are used to reduce system size and cost, as they allow the use of smaller and cheaper output inductors and capacitors.
High current IGBT gate drivers are key components in industrial and automotive applications such as solar inverters, motor drives, uninterruptible power supplies (UPS), xEV chargers, PTC heaters, powertrain inverters and other high current switching applications. The devices offer robust performance, improved reliability, and a cost-effective solution by eliminating the need for many additional components. ON Semiconductor’s new NCD570x series of gate drivers will be on display, demonstrating high drive current for valuable, improved system efficiency and the ability to fully integrate multiple protection features for enhanced safety.
The company’s automotive portfolio continues to expand to support diversifying applications across the whole low, medium and high-power spectrum. From devices for in-car media applications, through air conditioning to high-power solutions for internal combustion engine (ICE), hybrid, and pure electric powertrains, ON Semiconductor is continually developing new products to help support and accelerate the most rapid advances in vehicle technology in decades. An example of this is the new ASPM27 three-phase AEC-qualified Intelligent Power Module (IPM), an advanced Automotive Smart Power Module (SPM) that provides fully-featured, high-performance inverter output state for hybrid and electric vehicles. These modules integrate drivers, IGBTs and diodes to give a smaller, more reliable solution with enhanced thermal performance for use in applications such as automotive e-compressors for HVAC systems, electric oil pump controllers and high-voltage superchargers.
If that wasn’t enough ON Semiconductor experts will be presenting at both the Exhibitor and E-Mobility Forums as well as presenting posters throughout the event. See the below schedule, for even more information about ON Semiconductor at PCIM, visit www.onsemi.com/pcim
Forums:
Exhibitor Forum, Hall 7, booth 507
Tuesday, June 5 at 13:40 – 14:00
Speaker: Raghu Nathadi
Topic: High output current gate Drivers for High Voltage and High Power Applications such as UPS, Solar Inverters, Motor Drives, Traction Inverters, OBCs and PTC Heaters.
E-Mobility Forum, Hall 6, booth 320
Tuesday, June 5 and Wednesday, June 6 at 11:00 – 11:30am
Speaker: Andrea Colognese
Topic: Car Electrification: semiconductor power technologies to meet challenges and new applications. Electric vehicles are the future of transportation. To sustain this trend, ON Semiconductor is continuously investing in new technologies and introducing advanced solutions for new applications and functions inside the next generation e-cars.
Poster Sessions:
Tuesday, June 5 – Foyer Ground Floor Entrance NCC Mitte – 15:15 – 17:30
- Simulation Based Design of SiC MOSFET Power Modules for EV/HEV Traction Iverter Applications with Test Validation, Roy Davis, Yifan Xiao, John Gabrowski, Younhee Lee
- 650V E-Mode GaN HEMT Switching at 1 MHz for Travel Adapter Application, Ann Starks
- Discrete 1200V SiC MOSFETs - SMD Package Benefits and Impacts of Multiple Device and Circuit Parameters Mismatch in High Power Parallel Applications, Rajagopalan Jagannathan, Hans-Peter Hoenes, Tushar Duggal, Marco Atzeri
- Avalanche Rugged Low On-Resistance 1200V SiC MOSFETs with Excellent Long-Term Stability, Kwangwon Lee, Martin Domeij, Jimmy Franchi, Benedetto Buono, Fredrik Allerstam, Thomas Neyer
- Ruggedness Behavior of SiC JBS Diodes and SiC MOSFET Body Diodes Under Extreme Short Circuit Conditions, Mehrdad Baghaie, Thomas Neyer, Andrei Konstantinov, Martin Domeij
- Development of New 600V Smart Power Module for Home Appliances Motor Drive Application, Samuell Shin, Buemseung Jin, Kinam Song, Sewoong Oh, Thomas Yin
Wednesday, June 6 – Foyer Ground Floor Entrance Mitte – 15:15 – 17:30
- H3TRB Test on 1.2kV SiC MOSFETs, Martin Domeij, Fredrik Allerstam, Benedetto Buono, Jimmy Franchi, Thomas Neyer
- Advanced Functionality of HVIC Technology for Intelligent Power Module, Jinkyu Choi, Wonhi Oh, Kinam Song, Samuell Shin
- Effect of Lead Frame Structure and Electrical Characteristic Comparison of IPM Module, Samuell Shin, Bumseung Jin, Kangyoon Lee, Jinkyu Choi, Thomas Yin
- Virtual Prototyping of Applications for Wide Bandgap Power Devices Using Physically Scalable SPICE Models in Keysight Advances Design System, Mehrdad Baghaie
