Name: Silicon Carbide (SiC) Schottky Diode – EliteSiC, 30 A, 1200 V, D3, TO-247-2L
Brand: Silicon Carbide (SiC) Schottky Diode – EliteSiC, 30 A, 1200 V, D3, TO-247-2L
SKU: NDSH30120C-F155

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 30 A, 1200 V, D3, TO-247-2L

Overview

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

Applications

Industrial

End Products

UPS / ESS
Solar
EV Charger

Features

Max Junction Temperature 175 °C
Avalanche Rated 237 mJ
High Surge Current Capacity
Positive Temperature Coefficient
No Reverse Recovery / No Forward Recovery
Low Vf @ T_J:175 °C

Material Composition

Product Change Notification

Product List

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

Family

Configuration

V_RRM (V)

I_F(ave) (A)

V_F (Max)

I_FSM (A)

I_R (Max) (µA)

Reference Price

NDSH30120C-F155

Active

TO−247−2LD

340DC

TUBE

450

Single

1200

1.75

156

200

$6.3922

Product Number:

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Silicon Carbide (SiC) Diodes | NDSH30120C-F155

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 30 A, 1200 V, D3, TO-247-2L

Overview

Product List

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