Silicon Carbide (SiC) Diodes | NDC100170A

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 100 A, 1700 V, Die

Obsolete

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Overview

EliteSiC Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

  • PFC

  • AUX Power Supply
  • Rail Traction
  • Solar Inverter
  • Fast Charging Stations

  • Max Junction Temperature
  • High Surge Current Capacity
  • Low Vf
  • No Reverse Recovery / No Forward Recovery

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NDC100170A

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Obsolete

CAD Model

Pb

A

H

P

-

-

NA

0

MTFRM

1

N

D1

Single

1700

100

1.6

574

40

Price N/A

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Reliability Data

Die Related Summary Data

Device: NDC100170A

Equivalent to wafer fab process: SIC

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

SIC

0

3855921070

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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