Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 650 V, D1, TO-220FP-2L

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Overview

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. Llew

  • PFC
  • Industrial Power
  • Solar
  • EV Charger
  • UPS
  • Welding
  • Max Junction Temperature 175 °C
  • High Surge Current Capacity
  • Positive Temperature Coefficient
  • No Reverse Recovery / No Forward Recovery

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FFSPF1065A

Active

Pb

A

H

P

TO-220 FP / TO-220F-2FS

NA

0

TUBE

1000

Y

D1

Single

650

10

1.75

56

200

$1.8619

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