Silicon Carbide (SiC) Diodes | FFSB0465A

Silicon Carbide (SiC) Schottky Diode, 650 V, 4 A, D2PAK

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Overview

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. Llew

  • Telecommunication
  • Cloud system
  • Industrial
  • Telecom power
  • Server power
  • UPS / ESS
  • Solar
  • Max Junction Temperature 175 °C
  • High Surge Current Capacity
  • Positive Temperature Coefficient
  • No Reverse Recovery / No Forward Recovery

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FFSB0465A

Active

Pb

A

H

P

D2PAK2 (TO-263-2L)

418BK

1

260

REEL

800

Y

D1

Single

650

4

1.75

38

200

$1.2725

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