Silicon Carbide (SiC) Cascode JFET - EliteSiC, 18 mohm, 750V, TO-247-3L

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Overview

EliteSiC Cascode JFETs combine a normally-on SiC JFET with a Si MOSFET to create a normally-off device in a cascode circuit configuration, offering superior switching performance and reliability. Benefits include high efficiency, faster frequency, increased power density, reduced EMI, and smaller system size. These devices support standard gate drivers, simplifying the replacement of Si IGBTs and superjunction devices. Ideal for switching inductive loads

  • EV Charging
  • PV Inverters
  • Switched-Mode Power Supplies
  • Power Factor Correction Modules
  • Motor Drives
  • Induction Heating

  • Electric Vehicle
  • Power Supply Units
  • Solar Inverter

  • On-resistance (RDS(on)): 18 mohm (typ)
  • Maximum operating temperature: 175 °C
  • Excellent Reverse Recover
  • Low Gate Charge

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UJ4C075018K3S

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CAD Model

Pb

A

H

P

-

-

NA

0

REEL

1

F

750

81

18

TO-247-3L

37.8

217

175

N

$11.1197

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