P-Channel QFET® MOSFET -250 V, -0.55 A, 4.0 Ω

Last Shipments

Overview

These P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for highefficiency switching DC/DC converters.

  • High Efficiency Switching DC/DC Converters

  • -0.55 A, -250 V, RDS(on) = 4.0 Ω (Max.) @ VGS = -10 V, ID = -0.275 A
  • Low Gate Charge (Typ. 6.5 nC)
  • Low Crss (Typ. 6.5 pF)
  • 100% Avalanche Tested

Tools and Resources

Product services, tools and other useful resources related to FQT2P25

Product List

If you wish to buy products or product samples, please log in to your onsemi account.

Search

Close Search

Products:

1

Share

Product Groups:

Orderable Parts:

1

Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FQT2P25TF

Loading...

Last Shipments

CAD Model

Pb

A

H

P

SOT-223-4 / TO-261-4

1

250

REEL

4000

N

P-Channel

PowerTrench® T1

SOT-223-4

Small Signal

Standard

0

Single

0

-250

4000

-5

-5

-0.55

2.5

-

-

-

6.5

190

3

400

40

6.5

Price N/A

More Details

Show More

1-25 of 25

Products per page

Jump to :

contact sales icon

Support on the go

Find and compare products, get support and connect with onsemi sales team.