N-Channel UltraFET® Trench MOSFET 150V, 4.9A, 47mΩ

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Overview

UltraFET® devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for Rds(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters.

  • This product is general usage and suitable for many different applications.
  • DC/DC Converters
  • Telecom and Data-Com Distributed Power Architectures
  • 48-volt I/P Half-bridge/Full-Bridge
  • 24-volt Forward and Push-Pull Topologies

  • RDS(ON) = 0.040Ω (Typ.), VGS = 10V
  • Qg(TOT) = 29nC (Typ.), VGS = 10V
  • Low QRR Body Diode
  • Maximized efficiency at high frequencies
  • UIS Rated

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDS2572

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Active

CAD Model

Pb

A

H

P

SOIC-8

1

260

REEL

2500

Y

N-Channel

PowerTrench® T1

SOIC-8

Small Signal

Standard

0

Single

0

150

47

±20

4

4.9

2.5

-

-

-

4

2050

6

158

220

48

$0.7333

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