Dual N-Channel Shielded Gate PowerTrench® MOSFET, 100 V, 1.2 A, 350 mΩ

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Overview

This N-Channel MOSFET is produced using an advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.

  • Distribution
  • Max rDS(on) = 350 mΩ at VGS = 10 V, ID = 1.2 A
  • Max rDS(on) = 575 mΩ at VGS = 6 V, ID = 0.9 A
  • High performance trench technology for extremely low rDS(on)
  • High power and current handling capability in a widely used surface mount package
  • Fast switching speed
  • 100% UIL Tested
  • RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDC8602

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Active

CAD Model

Pb

A

H

P

TSOT-23-6

1

260

REEL

3000

Y

N-Channel

PowerTrench® T1

SC-6

Small Signal

Standard

0

Single

0

100

350

±20

4

1.2

0.96

-

-

2.5

0.6

53

0.4

12

17

0.8

$0.5175

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