P-Channel Enhancement Mode Field Effect Transistor -60V, -0.12A, 10Ω

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Overview

This P-Channel enhancement mode field effect transistors is produced using ON Semiconductor’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. The NDS0610 can be used, with a minimum of effort, in most applications requiring up to 120mA DC and can deliver current up to 1A. This product is particularly suited to low voltage applications requiring a low current high side switch.

  • This product is general usage and suitable for many different applications.
  • -0.12 A, -60 V. RDS(ON) = 10 Ω @ VGS = -10 V RDS(ON) = 20 Ω @ VGS = -4.5 V
  • Voltage controlled p-channel small signal switch
  • High density cell design for low RDS(ON)
  • High saturation current

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CAD Models

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

NDS0610

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Active

CAD Model

Pb

A

H

P

SOT-23 (TO-236)

1

260

REEL

3000

N

-60

10000

P-Channel

Single

±20

-3.5

-0.12

40

-

20000

11

1.8

79

$0.0833

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