FDS2572

N-Channel UltraFET^® Trench MOSFET 150V, 4.9A, 47mΩ

Overview

UltraFET^® devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for Rds(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters.

Applications

This product is general usage and suitable for many different applications.
DC/DC Converters
Telecom and Data-Com Distributed Power Architectures
48-volt I/P Half-bridge/Full-Bridge
24-volt Forward and Push-Pull Topologies

Features

R_DS(ON) = 0.040Ω (Typ.), V_GS = 10V
Q_g(TOT) = 29nC (Typ.), V_GS = 10V
Low Q_RR Body Diode
Maximized efficiency at high frequencies
UIS Rated

Material Composition

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MSL Type

MSL Temp (°C)

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Container Qty.

Channel Polarity

Configuration

V_(BR)DSS Min (V)

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Pricing ($/Unit)

FDS2572

Active

SOIC-8

751EB

260

REEL

2500

N-Channel

Single

150

±20

4.9

2.5

2050

$0.7333

Product Number:

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MOSFETs | FDS2572

N-Channel UltraFET® Trench MOSFET 150V, 4.9A, 47mΩ

Overview

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N-Channel UltraFET^® Trench MOSFET 150V, 4.9A, 47mΩ