N-Channel UltraFET® Trench MOSFET 150V, 4.9A, 47mΩ

Overview

UltraFET® devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for Rds(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters.

  • This product is general usage and suitable for many different applications.
  • DC/DC Converters
  • Telecom and Data-Com Distributed Power Architectures
  • 48-volt I/P Half-bridge/Full-Bridge
  • 24-volt Forward and Push-Pull Topologies
  • RDS(ON) = 0.040Ω (Typ.), VGS = 10V
  • Qg(TOT) = 29nC (Typ.), VGS = 10V
  • Low QRR Body Diode
  • Maximized efficiency at high frequencies
  • UIS Rated

Search

Close Search

Products:

1

Share

Product Groups:

Orderable Parts:

1

Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

FDS2572

Active

CAD Model

Pb

A

H

P

SOIC-8

1

260

REEL

2500

Y

N-Channel

Single

150

±20

4

4.9

2.5

-

-

47

-

4

2050

$0.7333

More Details

Show More

1-25 of 25

Products per page

Jump to :