P-Channel PowerTrench® MOSFET -20V, -56A, 6.5mΩ

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Overview

This P-Channel MOSFET is produced using an advanced PowerTrench® process that has been optimized for rDS(ON), switching performance and ruggedness.

  • This product is general usage and suitable for many different applications.
  • Max rDS(on) = 6.5 mΩ at VGS = -4.5 V, ID = -14 A
  • Max rDS(on) = 9.8 mΩ at VGS = -2.5 V, ID = -11 A
  • Max rDS(on) = 20 mΩ at VGS = -1.8 V, ID = -9 A
  • High performance trench technology for extremely low rDS(on)
  • High power and current handling capability in a widely used surface mount package
  • Lead-free and RoHS Compliant

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Product

Status

CAD Models

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FDMC6688P

Active

Pb

A

H

P

PQFN-8

1

260

REEL

3000

N

P-Channel

Single

-20

8

-1

-56

30

9.8

6.5

-

7

44

4956

$0.412

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