Single N-Channel 2.5V Specified PowerTrench® MOSFET 30V, 5.0A, 40mΩ

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Overview

This Single N-Channel MOSFET has been designed using an advanced Power Trench process to optimize the RDS(on) @VGS=2.5V on special MicroFET leadframe.

  • This product is general usage and suitable for many different applications.
  • RDS(on) = 40mΩ @ VGS = 4.5 V, ID = 5.0A
  • RDS(on) = 50mΩ@ VGS = 2.5 V, ID = 4.5A
  • Low Profile-0.8mm maximum-in the new packageMicroFET 2x2 mm
  • HBM ESD protection level > 2.5k V typical (Note 3)
  • Free from halogenated compounds and antimony oxides
  • RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMA430NZ

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Active

CAD Model

Pb

A

H

P

WDFN-6

1

260

REEL

3000

Y

N-Channel

PowerTrench® T1

Power 22

Low-Medium Voltage

Logic

0

Single

0

30

-

12

1.5

5

2.4

50

40

19

7.3

600

-

-

-

-

$0.2767

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