Single N-Channel 2.5V Specified PowerTrench® MOSFET 30V, 5.0A, 40mΩ

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Overview

This Single N-Channel MOSFET has been designed using an advanced Power Trench process to optimize the RDS(on) @VGS=2.5V on special MicroFET leadframe.

  • This product is general usage and suitable for many different applications.
  • RDS(on) = 40mΩ @ VGS = 4.5 V, ID = 5.0A
  • RDS(on) = 50mΩ@ VGS = 2.5 V, ID = 4.5A
  • Low Profile-0.8mm maximum-in the new packageMicroFET 2x2 mm
  • HBM ESD protection level > 2.5k V typical (Note 3)
  • Free from halogenated compounds and antimony oxides
  • RoHS Compliant

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CAD Models

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Package Type

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MSL Type

MSL Temp (°C)

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ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FDMA430NZ

Active

Pb

A

H

P

WDFN-6

1

260

REEL

3000

Y

N-Channel

Single

30

12

1.5

5

2.4

50

40

-

19

7.3

600

$0.2767

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