FDC8602: Dual N-Channel Shielded Gate PowerTrench® MOSFET, 100 V, 1.2 A, 350 mΩ

Datasheet: FDC8602-D.pdf
Rev. A (342kB)
Product Overview
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Product Change Notification
This N-Channel MOSFET is produced using an advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.
Features
 
  • Max rDS(on) = 350 mΩ at VGS = 10 V, ID = 1.2 A
  • Max rDS(on) = 575 mΩ at VGS = 6 V, ID = 0.9 A
  • High performance trench technology for extremely low rDS(on)
  • High power and current handling capability in a widely used surface mount package
  • Fast switching speed
  • 100% UIL Tested
  • RoHS Compliant
Applications
  • Distribution
Evaluation/Development Tool Information
Product Status Compliance Short Description
NCL31010GEVK Active
Pb-free
PoE Interface Intelligent LED Driver Evaluation Kit, IEEE 802.3bt, with Active Bridges
NCL31010REFGEVB Active
Pb-free
Intelligent PoE LED Driver reference design
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FDC8602 Active
Pb-free
Halide free
FDC8602 TSOT-23-6 419BL 1 260 Tape and Reel 3000 $0.4751
Market Leadtime (weeks) : Contact Factory
Avnet   (2020-08-19 00:00) : >1K

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
FDC8602  
 $0.4751 
Pb
H
 Active   
N-Channel
Single
100
±20
4
1.2
0.96
-
-
350
2.5
0.6
53
TSOT-23-6
Case Outlines
419BL   
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