N-Channel Enhancement Mode Field Effect Transistor 30V, 5A, 35mΩ

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Overview

This N-Channel enhancement mode power field effect transistors is produced using a proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMICA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.

  • This product is general usage and suitable for many different applications.
  • 5 A, 30 V
  • RDS(ON) = 0.035 Ω @ VGS = 10 V
  • RDS(ON) = 0.055 Ω @ VGS = 4.5 V
  • Proprietary SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities
  • High density cell design for extremely low RDS(ON)
  • Exceptional on-resistance and maximum DC current capability

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDC653N

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Active

CAD Model

Pb

A

H

P

TSOT-23-6

1

260

REEL

3000

Y

30

35

N-Channel

Single

20

2

5

1.6

-

55

5

12

350

$0.2323

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