FDC637BNZ

N-Channel PowerTrench^® MOSFET, 2.5V Specified, 20V, 6.2A, 24mΩ

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Overview

This N-Channel 2.5V specified MOSFET is produced using an advanced PowerTrench^® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.These devices have been designed to offer exceptional power dissipation in a very small footprint compared with bigger SO-8 and TSSOP-8 packages.

Applications

This product is general usage and suitable for many different applications.

Features

Max r_DS(on) = 24mΩ at V_GS = 4.5V, I_D = 6.2A
Max r_DS(on) = 32mΩ at V_GS = 2.5V, I_D = 5.2A
Fast switching speed
Low gate charge (8nC typical)
High performance trench technology for extremely low r_DS(on)
SuperSOT™¨C6 package: small footprint (72% smaller than standard SO-8; low profile (1mm thick)
HBM ESD protection level > 2kV typical (Note 3)
Manufactured using green packaging material
Halide-Free
RoHS Compliant

Material Composition

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Container Qty.

Channel Polarity

Configuration

V_(BR)DSS Min (V)

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Pricing ($/Unit)

FDC637BNZ

Active

TSOT-23-6

419BL

260

REEL

3000

N-Channel

Single

1.5

6.2

1.6

670

$0.1293

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MOSFETs | FDC637BNZ

N-Channel PowerTrench® MOSFET, 2.5V Specified, 20V, 6.2A, 24mΩ

Overview

Availability & Samples (size)

Email Sales

N-Channel PowerTrench^® MOSFET, 2.5V Specified, 20V, 6.2A, 24mΩ