N-Channel PowerTrench® MOSFET, 2.5V Specified, 20V, 6.2A, 24mΩ

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Overview

This N-Channel 2.5V specified MOSFET is produced using an advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.These devices have been designed to offer exceptional power dissipation in a very small footprint compared with bigger SO-8 and TSSOP-8 packages.

  • This product is general usage and suitable for many different applications.
  • Max rDS(on) = 24mΩ at VGS = 4.5V, ID = 6.2A
  • Max rDS(on) = 32mΩ at VGS = 2.5V, ID = 5.2A
  • Fast switching speed
  • Low gate charge (8nC typical)
  • High performance trench technology for extremely low rDS(on)
  • SuperSOT™¨C6 package: small footprint (72% smaller than standard SO-8; low profile (1mm thick)
  • HBM ESD protection level > 2kV typical (Note 3)
  • Manufactured using green packaging material
  • Halide-Free
  • RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDC637BNZ

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Active

CAD Model

Pb

A

H

P

TSOT-23-6

1

260

REEL

3000

N

20

-

N-Channel

Single

12

1.5

6.2

1.6

32

24

10

8

670

$0.1293

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