Power MOSFET, N-Channel, SUPERFET® II, 800 V, 6 A, 850 mΩ, DPAK

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Overview

SuperFET® II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. In addition, internal gate-source ESD diode allows to withstand over 2kV HBM surge stress.Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power and industrial power applications.

  • AC-DC Power Supply
  • LED Lighting
  • Typ. RDS(on) = 710 mΩ(Typ.)
  • Ultra Low Gate Charge (Typ. Qg = 22 nC)
  • Low Eoss (Typ. 2.3 uJ @ 400V)
  • Low Effective Output Capacitance (Typ. Coss(eff.) = 106 pF)
  • 100% Avalanche Tested
  • RoHS Compliant
  • ESD Improved Capability

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Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FCD850N80Z

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Active

CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

1

260

REEL

2500

Y

800

850

N-Channel

Single

DC: ±20, AC: ±30

4.5

6

75

-

-

-

29

990

$0.9293

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