FCD850N80Z: Power MOSFET, N-Channel, SUPERFET® II, 800 V, 6 A, 850 mΩ, DPAK

Datasheet: FCU850N80Z-D.pdf
Rev. A (1082kB)
Product Overview
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Product Change Notification
SuperFET® II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. In addition, internal gate-source ESD diode allows to withstand over 2kV HBM surge stress.Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power and industrial power applications.
Features
 
  • Typ. RDS(on) = 710 mΩ(Typ.)
  • Ultra Low Gate Charge (Typ. Qg = 22 nC)
  • Low Eoss (Typ. 2.3 uJ @ 400V)
  • Low Effective Output Capacitance (Typ. Coss(eff.) = 106 pF)
  • 100% Avalanche Tested
  • RoHS Compliant
  • ESD Improved Capability
Applications
  • AC-DC Power Supply
  • LED Lighting
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FCD850N80Z Active
Pb-free
Halide free
FCD850N80Z DPAK-3 / TO-252-3 369AS 1 260 Tape and Reel 2500 $0.8638
Market Leadtime (weeks) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
FCD850N80Z  
 $0.8638 
Pb
H
 Active   
N-Channel
Single
800
DC: ±20, AC: ±30
4.5
6
75
-
-
850
-
29
990
DPAK-3 / TO-252-3
Case Outlines
369AS   
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