MOSFETs | FCD850N80Z

Power MOSFET, N-Channel, SUPERFET® II, 800 V, 6 A, 850 mΩ, DPAK

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Overview

SuperFET® II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. In addition, internal gate-source ESD diode allows to withstand over 2kV HBM surge stress.Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power and industrial power applications.

  • AC-DC Power Supply
  • LED Lighting
  • Typ. RDS(on) = 710 mΩ(Typ.)
  • Ultra Low Gate Charge (Typ. Qg = 22 nC)
  • Low Eoss (Typ. 2.3 uJ @ 400V)
  • Low Effective Output Capacitance (Typ. Coss(eff.) = 106 pF)
  • 100% Avalanche Tested
  • RoHS Compliant
  • ESD Improved Capability

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

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ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FCD850N80Z

Active, Not Rec

Pb

A

H

P

DPAK-3 / TO-252-3

369AS

1

260

REEL

2500

N

N-Channel

Single

800

DC: ±20, AC: ±30

4.5

6

75

-

-

850

-

29

990

$0.9293

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