MOSFETs | BSS123

N-Channel Logic Level Enhancement Mode Field Effect Transistor 100V, 170 mA, 6Ω

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Overview

This N-Channel enhancement mode MOSFET is produced using a proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance.The BSS123 is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

  • This product is general usage and suitable for many different applications.
  • Small Servo Motor Control
  • powerPower MOSFET gate drivers
  • 0.17 A, 100 V
     RDS(ON) = 6 Ω @ VGS = 10 V
     RDS(ON) = 10 Ω @ VGS = 4.5 V
  • High Density Cell Design for Extremely Low RDS(ON)
  • Rugged and Reliable
  • Compact Industry Standard SOT-23 Surface Mount Package

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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BSS123

Active

Pb

A

H

P

SOT-23-3

318-08

1

260

REEL

3000

N

N-Channel

Single

100

±20

2

0.17

0.36

-

10000

6000

-

1.8

73

$0.0289

More Details

BSS123-F169

Last Shipments

Pb

A

H

P

SOT-23-3

318-08

1

260

REEL

3000

N

N-Channel

Single

100

±20

2

0.17

0.36

-

10000

6000

-

-

73

Price N/A

More Details

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