BSS123: N-Channel Logic Level Enhancement Mode Field Effect Transistor 100V, 170 mA, 6Ω

Datasheet: N-Channel Logic Level Enhancement Mode Field Effect Transistor
Rev. 10 (271kB)
Product Overview
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Product Change Notification
This N-Channel enhancement mode MOSFET is produced using a proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance.The BSS123 is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
Features
 
  • 0.17 A, 100 V
     RDS(ON) = 6 Ω @ VGS = 10 V
     RDS(ON) = 10 Ω @ VGS = 4.5 V
  • High Density Cell Design for Extremely Low RDS(ON)
  • Rugged and Reliable
  • Compact Industry Standard SOT-23 Surface Mount Package
Applications
  • This product is general usage and suitable for many different applications.
  • Small Servo Motor Control
  • power Power MOSFET gate drivers
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
BSS123 Active
Pb-free
Halide free
BSS123 SOT-23-3 318-08 1 260 Tape and Reel 3000 $0.0289
BSS123-F169 Last Shipments
Pb-free
Halide free
BSS123 SOT-23-3 318-08 1 260 Tape and Reel 3000  
Market Leadtime (weeks) : Contact Factory
Avnet   (2020-08-19 00:00) : >1M
Market Leadtime (weeks) : Contact Factory
ON Semiconductor   (2020-09-02 00:00) : 102,000

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
BSS123  
 $0.0289 
Pb
H
 Active   
N-Channel
Single
100
±20
2
0.17
0.36
-
10000
6000
-
1.8
73
SOT-23-3
Case Outlines
318-08   
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