NDT3055L

N-Channel Logic Level Enahncement Mode Field Effect Transistor 60V, 4A, 100mΩ

Overview

These logic level N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.

Applications

This product is general usage and suitable for many different applications.

Features

4 A, 60 V. R_DS(ON) = 0.100 Ω @ V_GS = 10 V, R_DS(ON) = 0.120 Ω @ V_GS = 4.5 V.
Low drive requirements allowing operation directly from logic drivers. V_GS(TH) < 2V.
High density cell design for extremely low R_DS(ON).
High power and current handling capability in a widely used surface mount package.

Material Composition

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

NDT3055L

Active

SOT-223-4 / TO-261-4

318H-01

260

REEL

4000

100

N-Channel

Single

±20

120

345

$0.4045

Product Number:

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MOSFETs | NDT3055L

N-Channel Logic Level Enahncement Mode Field Effect Transistor 60V, 4A, 100mΩ

Overview

Product List

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