30V Complementary PowerTrench® MOSFET

Obsolete

Overview

This complementary MOSFET device is produced using onsemi’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

  • This product is general usage and suitable for many different applications.

  • Q1: N-Channel
     6A, 30V
     RDS(ON) = 28 mΩ @ VGS = 10 V
     RDS(ON) = 35 mΩ @ VGS = 4.5 V
  • Q2: N-Channel
     -6A, -30V
     RDS(ON) = 32 mΩ @ VGS = -10 V
     RDS(ON) = 45 mΩ @ VGS = -4.5 V

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

SI4542DY

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Obsolete

CAD Model

Pb

A

H

P

SOIC-8

1

260

REEL

2500

N

Complementary

PowerTrench® T1

SOIC-8

Small Signal

Logic

0

Dual

0

±30

N: 28, P: 32

20

±3.0

N: 6.0, P: -6.0

2

NA

-

-

15

NA

-

-

-

-

Price N/A

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