Dual P-Channel Enhancement Mode Field Effect Transistor -60V, -0.34A, 5Ω

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Overview

These dual P-Channel Enhancement Mode Power Field Effect Transistors are produced using onsemi’s proprietary Trench Technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. This product is particularly suited to low voltage applications requiring a low current high side switch.

  • This product is general usage and suitable for many different applications.

  • -0.34 A, -50 V.  
  • RDS(ON) = 5 Ω @ VGS = -10 V
  • RDS(ON) = 7 Ω @ VGS = -4.7 V
  • Low gate charge
  • Fast switching speed
  • High performance trench technology for low RDS(ON)
  • SuperSOT™ -6 package: small footprint (72%smaller than standard SO-8); low profile (1mm thick)

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

NDC7003P

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CAD Model

Pb

A

H

P

TSOT-23-6

1

260

REEL

3000

N

P-Channel

PowerTrench® T1

SC-6

Small Signal

Logic

0

NA

0

-60

Q1=Q2=5000

±20

-3.5

-0.34

0.96

-

Q1=Q2=7000

-

1.6

66

0.3

-

13

6

$0.0819

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