Small Signal MOSFETs | FDS8960C

Dual N & P-Channel PowerTrench® MOSFET 35V

Obsolete

Datasheet

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Overview

These dual N- and P-channel enhancement mode power field effect transistors are produced using an advanced PowerTrench® process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

  • This product is general usage and suitable for many different applications.

  • Q1: N-Channel
    7.0 A, 35 V
    RDS(ON) = 24 mΩ @ VGS = 10 V
    RDS(ON) = 32 mΩ @ VGS = 4.5 V
  • Q2: P-Channel
    -5 A, -35 V
    RDS(ON) = 53 mΩ @ VGS = -10 V
    RDS(ON) = 87 mΩ @ VGS = -4.5 V
  • Fast switching speed
  • RoHS compliant

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Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDS8960C

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Obsolete

CAD Model

Pb

A

H

P

SOIC-8

751EB

1

260

REEL

2500

N

Complementary

PowerTrench® T1

NA

Small Signal

Logic

0

Dual

0

±35

N:24.0,P:53.0

25

±3

N: 7.0. P: -5.0

2

NA

-

5

5.7

NA

-

-

-

-

Price N/A

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