Dual N-Channel Shielded Gate PowerTrench® MOSFET 100V, 2.7A, 105mΩ

Overview

This N-Channel logic Level MOSFETs are produced using an advanced Power Trench® process that has been special tailored to minimize the on-state resisitance and yet maintain superior switching performance. G-S zener has been added to enhance ESD voltage level.

  • Consumer Appliances
  • DC-DC Conversion

  • Shielded Gate MOSFET Technology
  • Max rDS(on) = 105 mΩat VGS = 10 V, ID = 2.7 A
  • Max rDS(on) = 160 mΩat VGS = 4.5 V, ID = 2.1 A
  • High performance trench technology for extremely low rDS(on)
  • High power and current handling capability in a widely used surface mount package
  • CDM ESD protection level > 2KV typical (Note 4)
  • 100% UIL Tested
  • RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDS89161LZ

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Active

CAD Model

Pb

A

H

P

SOIC-8

1

260

REEL

2500

Y

N-Channel

PowerTrench® T1

SOIC-8

Small Signal

Logic

0

Dual

0

100

Q1:105.0, Q2: 105.0

±20

2.2

2.7

2

-

Q1:160.0, Q2: 160.0

-

2.1

227

0.7

20

44

3

$0.5026

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