N-Channel PowerTrench® MOSFET 100V, 11.2A, 9.8mΩ

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Overview

This N-Channel MOSFET is produced using an advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.

  • Distribution
  • DC/DC Converters
  • Off-line UPS
  • Distributed Power Architectures and VRMs
  • Primary Switch for 24V and 48V Systems
  • High Voltage Synchronous Rectifier

  • Max rDS(on) = 9.8 mΩ at VGS = 10 V, ID = 11.2 A
  • Max rDS(on) = 16 mΩ at VGS = 6 V, ID = 9 A
  • High performance trench technologh for extremely low rDS(on)
  • High power and current handing capability in a widely used surface mount package
  • 100% UIL Tested
  • RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDS86140

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Active

CAD Model

Pb

A

H

P

SOIC-8

1

260

REEL

2500

Y

N-Channel

PowerTrench® T1

SOIC-8

Small Signal

Standard

0

Single

0

100

9.8

±20

4

11.2

5

-

-

-

16.5

1940

6.5

59

440

20

$1.2073

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