Dual P-Channel 2.5V Specified PowerTrench™ MOSFET -20V, -6A, 30mΩ

Last Shipments

Overview

These P-Channel 2.5V specified MOSFETs are produced using an advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications: load switching and power management, battery charging and protection circuits.

  • This product is general usage and suitable for many different applications.

  • -6 A, -20 V
    RDS(ON) = 0.030 Ω @ VGS = -4.5 V
    RDS(ON) = 0.040 Ω @ VGS = -2.5 V.
  • Low gate charge (23nC typical).
  • High performance trench technology for extremely low RDS(ON).
  • High power and current handling capability.

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDS6875

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Last Shipments

CAD Model

Pb

A

H

P

SOIC-8

1

260

REEL

2500

N

P-Channel

PowerTrench® T1

SOIC-8

Small Signal

Logic

0

Dual

0

-20

-

8

-1.5

-6

2

Q1=Q2=40

Q1=Q2=30

12

23

2250

-

-

-

-

Price N/A

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