P-Channel 1.8V Specified PowerTrench® MOSFET -20V, -13.5A, 8.5mΩ

Overview

This P-Channel 1.8V specified MOSFET is a rugged gate version of an advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (1.8V – 8V).

  • This product is general usage and suitable for many different applications.
  • Power Management
  • Load Switch
  • Battery Protection

  • -13.5 A, -20 V.
  • RDS(on) = 8.5mΩ @ VGS = - 4.5V
  • RDS(on) = 10.5mΩ @ VGS = - 2.5V
  • RDS(on) = 14mΩ @ VGS = - 1.8V
  • Fast switching speed
  • High performance trench technology for extremelylow RDS(ON)
  • High current and power handling capability

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDS4465

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Active

CAD Model

Pb

A

H

P

SOIC-8

1

260

REEL

2500

N

P-Channel

PowerTrench® T1

SOIC-8

Small Signal

Logic

0

Single

0

-20

-

8

-1.5

-13.5

2.5

10.5

8.5

-

86

8237

-

-

-

-

$0.5675

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