P-Channel PowerTrench® MOSFET -40V, -10.8A, 13.0mΩ

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Overview

This P-Channel MOSFET has been produced using a proprietary PowerTrench® technology to deliver low rDS(on) and optimized BVDSS capability to offer superior performance benefit in the applications and optimized switching performance capability reducing power dissipation losses in converter/inverter applications.

  • This product is general usage and suitable for many different applications.
  • Control Switch in Synchronous & Non-Synchronous Buck
  • Load Switch
  • Inverter

  • Max rDS(on) = 13.0mΩ at VGS = -10V, ID = -10.5A
  • Max rDS(on) = 19.0mΩ at VGS = -4.5V, ID = -8.4A
  • High performance trench technology for extremely low rDS(on)
  • RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDS4141

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CAD Model

Pb

A

H

P

SOIC-8

1

260

REEL

2500

N

P-Channel

PowerTrench® T1

SOIC-8

Small Signal

Logic

0

Single

0

-40

13

±20

-3

-10.8

5

-

19

16

19

2005

7

14

355

190

$0.2568

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