Small Signal MOSFETs | FDS2734

N-Channel UItraFET Trench® MOSFET 250V, 3.0A, 117mΩ

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Overview

This single N-Channel MOSFET is produced using an advanced UItraFET Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

  • This product is general usage and suitable for many different applications.
  • DC-DC Conversion

  • Max rDS(on) =117mΩ at VGS =10V, ID = 3.0A
  • Max rDS(on) =126mΩ at VGS = 6V, ID = 2.8A
  • Fast switching speed
  • High performance trench technology for extremely low rDS(on)
  • High power and current handling capability
  • RoHS compliant

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Channel Polarity

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Package Name

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Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDS2734

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CAD Model

Pb

A

H

P

SOIC-8

751EB

1

260

REEL

2500

Y

N-Channel

PowerTrench® T1

SOIC-8

Small Signal

Standard

0

Single

0

250

117

±30

4

3

2.5

-

-

-

32

1960

8

185

85

26

$0.8948

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Reliability Data

Die Related Summary Data

Device: FDS2734

Equivalent to wafer fab process: 2C

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

2C

0

3698398665

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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