P-Channel 1.8V Specified PowerTrench® MOSFET -12V, -2.6A, 40mΩ

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Overview

This P-Channel 1.8V specified MOSFET uses an advanced low voltage PowerTrench process. It has been optimized for battery power management applications.

  • This product is general usage and suitable for many different applications.
  • Battery Management
  • Load Switch
  • Battery Protection
  • -2.6 A, -12 V
  • RDS(ON) = 40 mΩ @ VGS = -4.5 V
  • RDS(ON) = 50 mΩ @ VGS = -2.5 V
  • RDS(ON) = 80 mΩ @ VGS = -1.8 V
  • Fast switching speed
  • High performance trench technology for extremelylow RDS(ON)
  • SuperSOT™-3 provides low RDS(ON) and 30% higherpower handling capability than SOT23 in the samefootprint

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDN306P

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Active

CAD Model

Pb

A

H

P

SOT-23-3

1

260

REEL

3000

N

P-Channel

PowerTrench® T1

SOT-23

Small Signal

Logic

0

Single

0

-12

-

8

-1.5

-2.6

0.5

50

40

4.5

12

1138

-

-

-

-

$0.1309

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