P-Channel PowerTrench® MOSFET, 2.5V specified, -20V, -4.5A, 48mΩ

Overview

This P-Channel 2.5V specified MOSFET is produced using an advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for battery power applications: load switching and power management, battery charging circuits, and DC/DC conversion.

  • This product is general usage and suitable for many different applications.

  • –4.5 A, –20 V.
  • RDS(ON) = 48 mΩ @ VGS = –4.5 V
    RDS(ON) = 65 mΩ @ VGS = –2.5 V
  • Low gate charge (10 nC typical)
  • High performance trench technology for extremely low RDS(ON)
  • SuperSOT ™ –6 package: small footprint (72% smaller than standard SO-8; low profile (1mm thick)

Tools and Resources

Product services, tools and other useful resources related to FDC638P

Buy/Parametrics Table

Search

Close Search

Products:

1

Share

Product Groups:

Orderable Parts:

1

Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDC638P

Loading...

Active

CAD Model

Pb

A

H

P

TSOT-23-6

1

260

REEL

3000

Y

P-Channel

PowerTrench® T1

SC-6

Small Signal

Logic

0

Single

0

-20

-

8

-1.5

-4.5

1.6

65

48

11

10

1160

-

-

-

-

$0.1733

More Details

Show More

1-25 of 25

Products per page

Jump to :

contact sales icon

Support on the go

Find and compare products, get support and connect with onsemi sales team.