N & P-Channel PowerTrench® MOSFETs, 30V

Favorite

Overview

These N & P-Channel MOSFETs are produced using an advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.

  • This product is general usage and suitable for many different applications.
  • Q1 2.5 A, 30V
  • RDS(on) = 95 mΩ@ VGS = 10 V
  • RDS(on) = 150 mΩ @ VGS = 4.5 V
  • Q2 –2.0 A, 30V.
  • RDS(on) = 150 mΩ@ VGS = -10 V
  • RDS(on) = 220 mΩ @ VGS = -4.5 V
  • Low gate charge
  • High performance trench technology for extremely low RDS(ON)
  • SuperSOT –6 package: small footprint (72% smaller thanSO-8); low profile (1mm thick).

Product List

If you wish to buy products or product samples, please log in to your onsemi account.

Search

Close Search

Products:

1

Share

Product Groups:

Orderable Parts:

1

Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDC6333C

Loading...

Active

CAD Model

Pb

A

H

P

TSOT-23-6

1

260

REEL

3000

Y

Complementary

PowerTrench® T1

SC-6

Small Signal

Logic

0

Dual

0

±25

N: 95, P: 150

25

3

N:2.5 , P: -2.0

0.96

-

N: 150, P: 220

3.3

4.1

185

-

-

-

-

$0.1816

More Details

Show More

1-25 of 25

Products per page

Jump to :