Dual P-Channel PowerTrench® MOSFET, 1.8V specified, -12V, -2.5A, 90mΩ

Overview

These P-Channel 1.8V specified MOSFETs are produced using an advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.

  • This product is general usage and suitable for many different applications.

  • -2.5A, -12V
     RDS(ON) = 90mΩ @ VGS = -4.5V
     RDS(ON) = 125mΩ @ VGS = -2.5V
     RDS(ON) = 200mΩ @ VGS = -1.8V
  • High performance trench technology for extremely low RDS(ON)
  • SuperSOT™-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick)

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDC6318P

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Active

CAD Model

Pb

A

H

P

TSOT-23-6

1

260

REEL

3000

Y

P-Channel

PowerTrench® T1

SC-6

Small Signal

Logic

0

Dual Series

0

-12

-

8

-1.5

-2.5

0.96

125

90

-

5.4

455

-

-

-

-

$0.2603

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