SI4435DY: 30V P-Channel PowerTrench® MOSFET -8.8A, 20mΩ

Datasheet: 30V P-Channel PowerTrench® MOSFET
Rev. 4 (226kB)
Product Overview
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Product Change Notification
This P-Channel MOSFET is a rugged gate version of ON Semiconductor Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V - 25V).
Features
 
  • -8.8 A, -30 V
     - RDS(ON) = 20 mΩ @ VGS = -10 V
     - RDS(ON) = 35 mΩ @ VGS = -4.5 V
  • Low gate charge (17nC typical)
  • Fast switching speed
  • High performance trench technology for extremely low RDS(ON)
  • High power and current handling capability
Applications
  • This product is general usage and suitable for many different applications.
Technical Documentation & Design Resources
Application Notes (12) Package Drawings (1)
Data Sheets (1)  
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
SI4435DY Active
Pb-free
Halide free
SI4435DY SOIC-8 751EB 1 260 Tape and Reel 2500 $0.3736
Market Leadtime (weeks) : Contact Factory
Avnet   (2020-08-19 00:00) : >10K

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
SI4435DY  
 $0.3736 
Pb
H
 Active   
P-Channel
Single
-30
20
-3
-8.8
2.5
-
35
20
-
17
1604
SOIC-8
Case Outlines
751EB   
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