RFP50N06: N-Channel Power MOSFET 60V, 50A, 22mΩ

Datasheet: RFP50N06-D.pdf
Rev. A (1360kB)
Product Overview
View Reliability Data
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Product Change Notification
These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits.
Formerly developmental type TA49018.
Features
 
  • 50A, 60V
  • rDS(ON)= 0.022Ω
  • Temperature Compensating PSPICE® Model
  • Peak Current vs Pulse Width Curve
  • UIS Rating Curve
  • 175°C Operating Temperature
Applications
  • Other Industrial
Technical Documentation & Design Resources
Application Notes (13) Package Drawings (1)
Data Sheets (1)  
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
RFP50N06 Active
Pb-free
Halide free
RFP50N06 TO-220-3 340AT NA Tube 800 $0.9978
Market Leadtime (weeks) : Contact Factory
Avnet   (2020-08-19 00:00) : >1K

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
RFP50N06  
 $0.9978 
Pb
H
 Active   
N-Channel
Single
60
±20
4
50
131
-
-
22
-
67
2020
TO-220-3
Case Outlines
340AT   
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