Low/Medium Voltage MOSFETs | FDD4685

P-Channel PowerTrench® MOSFET, -40V, -23A, 27mΩ

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Overview

This P-Channel MOSFET has been produced using a proprietary PowerTrench® technology to deliver low rDS(on) and good switching characteristic offering superior performance in application.

  • This product is general usage and suitable for many different applications.

  • Max rDS(on) = 27mΩ at VGS = -10V, ID = -8.4A
  • Max rDS(on) = 35mΩ at VGS = -4.5V, ID = -7A
  • High performance trench technology for extremely low rDS(on)
  • RoHS Compliant

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Package Type

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MSL Type

MSL Temp (°C)

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ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDD4685

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CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

369AS

1

260

REEL

2500

Y

P-Channel

PowerTrench® T1

DPAK

Low-Medium Voltage

Logic

0

Single

0

-40

27

±20

-3

-32

69

-

35

-

19

1790

6.1

31

260

140

$0.3075

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Reliability Data

Die Related Summary Data

Device: FDD4685

Equivalent to wafer fab process: TT

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

TT

6

2104831460

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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