FQD2N90: Power MOSFET, N-Channel, QFET®, 900 V, 1.7 A, 7.2 Ω, DPAK

Datasheet: N-Channel QFET® MOSFET 900 V, 1.7 A, 7.2 Ω
Rev. 2 (2037kB)
Product Overview
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Product Change Notification
This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Features
 
  • 1.7A, 900V, RDS(on) = 7.2Ω(Max.) @VGS = 10 V, ID = 0.85A
  • Low gate charge ( Typ. 12nC)
  • Low Crss ( Typ. 5.5pF)
  • 100% avalanche tested
  • RoHS compliant
Applications
  • Lighting
Technical Documentation & Design Resources
Application Notes (12) Package Drawings (1)
Data Sheets (1)  
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FQD2N90TM Active
Pb-free
Halide free
FQD2N90 DPAK-3 / TO-252-3 369AS 1 260 Tape and Reel 2500 $0.5057
Market Leadtime (weeks) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
FQD2N90TM  
 $0.5057 
Pb
H
 Active   
N-Channel
Single
900
±30
5
1.7
50
-
-
7200
-
12
390
DPAK-3 / TO-252-3
Case Outlines
369AS   
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