FQD1N80: Power MOSFET, N-Channel, QFET®, 800 V, 1.0 A, 20 Ω, DPAK

Datasheet: FQU1N80-D.pdf
Rev. A (1451kB)
Product Overview
View Reliability Data
View Material Composition
Product Change Notification
This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts..
Features
 
  • 1A, 800V, RDS(on) = 20Ω(Max.) @VGS = 10 V, ID = 0.5A
  • Low gate charge ( Typ. 5.5nC)
  • Low Crss ( Typ. 2.7pF)
  • 100% avalanche tested
Applications
  • Lighting
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FQD1N80TM Active
Pb-free
Halide free
FQD1N80 DPAK-3 / TO-252-3 369AS 1 260 Tape and Reel 2500 $0.2785
Market Leadtime (weeks) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
FQD1N80TM  
 $0.2785 
Pb
H
 Active   
N-Channel
Single
800
±30
5
1
45
-
-
20000
-
5.5
150
DPAK-3 / TO-252-3
Case Outlines
369AS   
Previously Viewed Products
Clear List

Your request has been submitted for approval.
Please allow 2-5 business days for a response.
You will receive an email when your request is approved.
Request for this document already exists and is waiting for approval.