FDY1002PZ: Dual P-Channel (-1.5 V) Specified PowerTrench® MOSFET -20V, -0.83A, 0.5Ω

Datasheet: MOSFET – Dual, P-Channel (-1.5 V), Specified, POWERTRENCH® –20 V, –0.83 A, 0.5 Ω
Rev. 4 (277kB)
Product Overview
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Product Change Notification
This Dual P-Channel MOSFET has been designed using an advanced Power Trench process to optimize the rDS(on)@VGS = –1.5 V.
Features
 
  • Max rDS(on) = 0.5 Ω at VGS = –4.5 V, ID = –0.83 A
  • Max rDS(on) = 0.7 Ω at VGS = –2.5 V, ID = –0.70 A
  • Max rDS(on) = 1.2 Ω at VGS = –1.8 V, ID = –0.43 A
  • Max rDS(on) = 1.8 Ω at VGS = –1.5 V, ID = –0.36 A
  • HBM ESD protection level = 1400 V (Note 3)
  • RoHS Compliant
Applications
  • This product is general usage and suitable for many different applications.
  • Li-Ion Battery Pack
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FDY1002PZ Active
Pb-free
Halide free
FDY1002PZ SOT-563 419BH 1 260 Tape and Reel 3000 $0.1631
Market Leadtime (weeks) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
FDY1002PZ  
 $0.1631 
Pb
H
 Active   
P-Channel
Dual
-20
8
-1
-0.83
0.625
0.7
Q1=Q2=700
0.5
500
Q1=Q2=500
-
0.8
2.2
100
SOT-563
Case Outlines
419BH   
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