P-Channel Digital FET -25V, -0.46A, 1.1Ω

Overview

This P-Channel enhancement mode field effect transistors is produced using a proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions. This device is designed especially for application in battery power applications such as notebook computers and cellular phones. This device has excellent on-state resistance even at gate drive voltages as low as 2.5 volts.

  • This product is general usage and suitable for many different applications.
  • -25 V, -0.46 A continuous, -1.5 A Peak.
     RDS(ON) = 1.1 Ω @ VGS = -4.5 V,
     RDS(ON) = 1.5 Ω @ VGS = -2.7 V
  • Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5V.
  • Gate-Source Zener for ESD ruggedness. >6kV Human Body Model.
  • Compact industry standard SOT-23 surface mount package.

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

FDV304P

Active

CAD Model

Pb

A

H

P

SOT-23-3

1

260

REEL

3000

N

P-Channel

Single

-25

-8

-1.5

-0.46

0.35

1500

1100

-

-

1.1

63

$0.0771

More Details

FDV304P-F169

Last Shipments

CAD Model

Pb

A

H

P

SOT-23-3

1

260

REEL

3000

N

P-Channel

Single

-25

-8

-1.5

-0.46

0.35

1500

1100

-

-

-

63

Price N/A

More Details

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