MOSFETs | FDS9934C

Complementary PowerTrench® MOSFET 20V

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Overview

These dual N- and P-channel enhancement mode power field effect transistors are produced using an advanced PowerTrench® process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

  • This product is general usage and suitable for many different applications.
  • Q1: N-Channel
    6.5 A, 20 V
    RDS(ON) = 30 mΩ @ VGS = 4.5 V
    RDS(ON) = 43 mΩ @ VGS = 2.5 V
  • Q2: P-Channel
    -5 A, -20 V
    RDS(ON) = 55 mΩ @ VGS = -4.5 V
    RDS(ON) = 90 mΩ @ VGS = -2.5 V

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDS9934C

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Active

CAD Model

Pb

A

H

P

SOIC-8

751EB

1

260

REEL

2500

N

±20

-

Complementary

Dual

12

Q1:1.5, Q2: -1.2

-5

2

N: 43, P: 90

N: 30, P: 55

-

8.7

955

$0.3351

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