FDS8638: N-Channel PowerTrench® MOSFET 40V, 18A, 4.3mΩ

Datasheet: FDS8638-D.pdf
Rev. A (386kB)
Product Overview
View Reliability Data
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Product Change Notification
This N-Channel MOSFET is produced using an advance Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Features
 
  • Max rDS(on) = 4.3 mΩ at VGS = 10 V, ID = 18 A
  • Max rDS(on) = 5.4 mΩ at VGS = 4.5 V, ID = 16 A
  • High performance trench technology for extremely low rDS(on)
  • 100% UIL Tested
  • RoHS Compliant
Applications
  • This product is general usage and suitable for many different applications.
  • Synchronous Rectifier
  • Load Switch
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FDS8638 Active
Pb-free
Halide free
FDS8638 SOIC-8 751EB 1 260 Tape and Reel 2500 $0.706
Market Leadtime (weeks) : 8 to 12
Avnet   (2020-08-19) : >1K

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
FDS8638  
 $0.706 
Pb
H
 Active   
N-Channel
Single
40
±20
3
18
2.5
-
5.4
4.3
10
27
4270
SOIC-8
Case Outlines
751EB   
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