FDS86252: N-Channel Power Trench® MOSFET 150V, 4.5A, 55mΩ

Datasheet: FDS86252-D.pdf
Rev. A (331kB)
Product Overview
View Reliability Data
View Material Composition
Product Change Notification
This N-Channel MOSFET is produced using an advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintaiin superior switching performance.
Features
 
  • Max rDS(on) = 55 mΩ at VGS = 10 V, ID = 4.5 A
  • Max rDS(on) = 80 mΩ at VGS = 6 V, ID = 3.7 A
  • High performance trench technology for extremely low rDS(on)
  • High power and current handling capability in a widely used surface mount package
  • 100% UIL Tested
  • RoHS Compliant
Applications
  • Consumer Appliances
  • DC-DC Conversion
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FDS86252 Active
Pb-free
Halide free
FDS86252 SOIC-8 751EB 1 260 Tape and Reel 2500 $0.3624
Market Leadtime (weeks) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
FDS86252  
 $0.3624 
Pb
H
 Active   
N-Channel
Single
150
±20
4
4.5
5
-
-
55
-
5.2
718
SOIC-8
Case Outlines
751EB   
Previously Viewed Products
Clear List

Your request has been submitted for approval.
Please allow 2-5 business days for a response.
You will receive an email when your request is approved.
Request for this document already exists and is waiting for approval.