FDS86240: N-Channel PowerTrench® MOSFET 150V, 7.5A, 19.8mΩ

Datasheet: FDS86240-D.pdf
Rev. A (422kB)
Product Overview
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Product Change Notification
This N-Channel MOSFET is produced using an advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.
Features
 
  • Max rDS(on) = 19.8 mΩ at VGS = 10 V, ID = 7.5 A
  • Max rDS(on) = 26 mΩ at VGS = 6 V, ID = 6.4 A
  • High Performance Trench Technology for Extremely Low rDS(on)
  • High Power and Current Handling Capability in a Widely Used Surface Mount Package
  • 100% UIL Tested
  • RoHS Compliant
Applications
  • This product is general usage and suitable for many different applications.
  • DC/DC Converters
  • Off-line UPS
  • Distributed Power Architectures and VRMs
  • Primary Switch for 24V and 48V Systems
  • High Voltage Synchronous Rectifier
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FDS86240 Active
Pb-free
Halide free
FDS86240 SOIC-8 751EB 1 260 Tape and Reel 2500 $1.1903
Market Leadtime (weeks) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
FDS86240  
 $1.1903 
Pb
H
 Active   
N-Channel
Single
150
±20
4
7.5
5
-
-
19.8
-
16
1930
SOIC-8
Case Outlines
751EB   
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