P-Channel PowerTrench® MOSFET -30V, 14.5A, 7.8mΩ

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Overview

This P-Channel MOSFET is produced using an advanced Power Trench process that has been especially tailored to minimize the on-state resistance.
This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

  • This product is general usage and suitable for many different applications.
  • Max rDS(on) = 7.8mΩ, VGS = -10V, ID = -14.5A
  • Max rDS(on) = 12mΩ, VGS = -4.5V, ID = -12A
  • Extended VGS range (-25V) for battery applications
  • HBM ESD protection level of 6.5kV typical (note 3)
  • High performance trench technology for extremely low rDS(on)
  • High power and current handling capability
  • RoHS compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDS6673BZ

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Active

CAD Model

Pb

A

H

P

SOIC-8

1

260

REEL

2500

N

-30

7.8

P-Channel

Single

25

-3

-14.5

2.5

-

12

30

46

3500

$0.5043

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