FDS6670A: Single N-Channel Logic Level PowerTrench® MOSFET 30V, 13A, 8mΩ

Datasheet: Single N-Channel, Logic Level, Power Trench, MOSFET
Rev. A (253kB)
Product Overview
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Product Change Notification
This N-Channel Logic Level MOSFET is produced using an advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Features
 
  • 13 A, 30 V
  • RDS(ON) = 8 mΩ @ VGS = 10 V
  • RDS(ON) = 10 mΩ @ VGS = 4.5 V
  • Fast switching speed
  • Low gate charge
  • High performance trench technology for extremely low RDS(ON)
  • High power and current handling capability
Applications
  • This product is general usage and suitable for many different applications.
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FDS6670A Active
Pb-free
Halide free
FDS6670A SOIC-8 751EB 1 260 Tape and Reel 2500 $0.3227
Market Leadtime (weeks) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
FDS6670A  
 $0.3227 
Pb
H
 Active   
N-Channel
Single
30
20
3
13
2.5
-
10
8
46
21
2220
SOIC-8
Case Outlines
751EB   
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