FDPF8D5N10C: N-Channel Shielded Gate PowerTrench® MOSFET, 100V, 76A, 8.5mΩ

Datasheet: N-Channel Shielded Gate PowerTrench MOSFET
Rev. 1 (969kB)
Product Overview
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This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.
Features   Benefits
     
  • Max RDS(on) = 8.5 mΩ at VGS = 10 V, ID = 76 A
 
  • Power Density & Shielded Gate Power Density & Shielded Gate High efficiency / High performance
  • High Performance Trench Technology for Extremely Low RDS(on)
 
  • High power density with Shielded gate technology
  • Extremely Low Reverse Recovery Charge, Qrr
 
  • Low Vds spike internal snubber function.
  • Low Gate Charge, QG = 25nC ( Typ.)
 
  • Low switching loss
  • High Power and Current Handling Capability
 
  • Low Qrr/Trr
  • 100% UIL Tested
 
  • Soft recovery performance
  • RoHS Compliant
   
Applications   End Products
  • Synchronous Rectification for ATX / Server / Workstation / Telecom PSU / Adapter and Industrial Power Supplies.
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
 
  • Server
  • Telecom
  • Computing ( ATX, Workstation, Adapter, Industrial Power Supplies etc. )
  • Motor Drive
  • Uninterruptible Power Supplies
  • Solar Inverter
Technical Documentation & Design Resources
Simulation Models (3) Package Drawings (1)
Data Sheets (1)  
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FDPF8D5N10C Active
Pb-free
Halide free
FDPF8D5N10C, N-Channel Shielded Gate PowerTrench® MOSFET, 100V, 76A, 8.5mΩ TO-220-3 FullPak 221AT NA Tube 1000 $1.6891
Market Leadtime (weeks) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
FDPF8D5N10C  
 $1.6891 
Pb
H
 Active   
N-Channel
Single
100
20
4
76
35
-
-
8.5
-
25
1765
TO-220-3 FullPak
Case Outlines
221AT   
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